Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter

Towards Sub-10 nm Diameter III-V Vertical Nanowire Transistors

Towards the demonstration of sub-10 nm III-V vertical fin and nanowire MOSFETs, a novel alcohol-based digital-etch technology has been developed. The new technique minimizes the mechanical forces exerted on vertical nanowire structures. A consistent 1 nm/cycle etching rate on both InGaAs and InGaSb-based heterostructures has been obtained. This is the first demonstration of digital etch on anti...

Thermal drawing of high-density macroscopic arrays of well-ordered sub-5-nm-diameter nanowires.

We investigate the lower limit of nanowire diameters stably produced by the process of thermal fiber drawing and fiber tapering. A centimeter-scale macroscopic cylindrical preform containing the nanowire material in the core encased in a polymer scaffold cladding is thermally drawn in the viscous state to a fiber. By cascading several iterations of the process, continuous reduction of the diame...

Fabrication of 10 nm diameter hydrocarbon nanopores

Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires

Silicon nanowires with sub 10 nm lateral dimensions: From atomic force microscope lithography based fabrication to electrical measurements

The ability of the atomic force microscope ~AFM! to realize lithography patterns on silicon surfaces is widely known and leads to the formation of silicon nanostructures after an etching step. In this article, we aim at improving the fabrication process to yield silicon nanowires with minimum lateral dimensions for the realization of Coulomb blockade based devices. First, we focus on the AFM li...